Title :
Anomalous disordered-related phenomena in the InGaN/GaN multiple quantum well heterosystems
Author :
Haung, Yi-Wen ; Chen, Yu-Fang ; Wang, Jen-Cheng ; Shen, Hui-Tang ; Nee, Tzer-En
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan
Abstract :
Influences of InGaN/GaN MQW heterostructures with InGaN/GaN and GaN barrier on the carrier confinement have been investigated the degree of disorder over a broad range of temperatures from 20 K to 300 K.
Keywords :
III-V semiconductors; gallium compounds; hopping conduction; indium compounds; semiconductor quantum wells; tunnelling; wide band gap semiconductors; GaN barrier; InGaN-GaN; MQW heterostructures; anomalous disordered-related phenomena; carrier confinement; carrier hopping; carrier tunneling; multiple quantum well heterosystem; temperature 20 K to 300 K; Carrier confinement; Current measurement; Gallium nitride; Helium; Quantum well devices; Temperature dependence; Temperature distribution; Temperature measurement; Tunneling; Wave functions;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5217626
