Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions

Author

Xu, Zhongguang ; Huo, Zongliang ; Zhu, Chenxin ; Liu, Jing ; Liu, Ming

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

In this paper, we proposed an additional post-deposition annealing PDA processes by inserting a pre-treatment before high temperature annealing in N₂ ambience, which has been demonstrated to efficiently optimize the performance of Metal/Al₂O₃/Si₃N₄/SiO₂/Si (MANOS) devices. By using low-energy plasma oxygenic ions bombardment to the surface of ONA stack, the retention and erase speed obtain a better tradeoff compared to those annealed only in N₂ ambience. Metal/Al₂O₃/SiO₂/Si (MAOS) structures without trapping layer are also fabricated to investigate the impact on the Al₂O₃ film under various PDA conditions for further understanding the mechanism for the improved performance. The result indicates that the pre-treatment can reduce oxygen vacancies in the Al₂O₃ film, which can effectively improve the breakdown voltage and decrease leakage current.

Keywords

alumina; annealing; circuit optimisation; elemental semiconductors; flash memories; leakage currents; plasma deposition; silicon; silicon compounds; Al₂O₃-Si₃N₄-SiO₂-Si; MANOS devices; MAOS structures; ONA stack; PDA process; Si; breakdown voltage; charge trapping flash memory; high temperature annealing; leakage current; low-energy plasma oxygenic ion pre-treatment; post-deposition annealing; Aluminum oxide; Films; Logic gates; Plasma temperature; Surface treatment; Temperature; Tunneling; MANOS; high temperature PDA; pre-treatment of plasma oxygenic irons; retention;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137097

Filename

6137097