Title :
Performance optimization for TANOS by using pre-treatment of plasma oxygenic ions
Author :
Xu, Zhongguang ; Huo, Zongliang ; Zhu, Chenxin ; Liu, Jing ; Liu, Ming
Author_Institution :
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
In this paper, we proposed an additional post-deposition annealing PDA processes by inserting a pre-treatment before high temperature annealing in N2 ambience, which has been demonstrated to efficiently optimize the performance of Metal/Al2O3/Si3N4/SiO2/Si (MANOS) devices. By using low-energy plasma oxygenic ions bombardment to the surface of ONA stack, the retention and erase speed obtain a better tradeoff compared to those annealed only in N2 ambience. Metal/Al2O3/SiO2/Si (MAOS) structures without trapping layer are also fabricated to investigate the impact on the Al2O3 film under various PDA conditions for further understanding the mechanism for the improved performance. The result indicates that the pre-treatment can reduce oxygen vacancies in the Al2O3 film, which can effectively improve the breakdown voltage and decrease leakage current.
Keywords :
alumina; annealing; circuit optimisation; elemental semiconductors; flash memories; leakage currents; plasma deposition; silicon; silicon compounds; Al2O3-Si3N4-SiO2-Si; MANOS devices; MAOS structures; ONA stack; PDA process; Si; breakdown voltage; charge trapping flash memory; high temperature annealing; leakage current; low-energy plasma oxygenic ion pre-treatment; post-deposition annealing; Aluminum oxide; Films; Logic gates; Plasma temperature; Surface treatment; Temperature; Tunneling; MANOS; high temperature PDA; pre-treatment of plasma oxygenic irons; retention;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137097
