Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Author

Fu, Y.Y. ; Li, A.D. ; Liu, X.J. ; Li, X.F. ; Wu, D. ; Tang, Z.J.

Author_Institution

Dept. of Mater. Sci. & Eng., Nanjing Univ., Nanjing, China

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

A charge trapping flash memory using amorphous Al₂O₃ as the tunneling layer, La-doped HfO₂ films as the charge trapping layer and pure HfO₂ as the blocking layer was fabricated and investigated. X-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD), and transmission electron microscopic (TEM) were used to characterize the structures and microstructures. The HfO₂/ (HfO₂)_0.75(La₂O₃)_0.25(HLO) /Al₂O₃/Si stack annealed at 800°C shows distinct interface and nanocrystals in charge trapping layer. The electrical characteristics and charge storage properties of the HfO₂/ HLO/Al₂O₃/Si stack were also evaluated. The HfO₂/ HLO/Al₂O₃/Si stack annealed at 800°C exhibits a large memory window (9V at ±11 V, 1 s).

Keywords

X-ray diffraction; X-ray photoelectron spectra; alumina; annealing; atomic layer deposition; crystal microstructure; flash memories; hafnium compounds; high-k dielectric thin films; lanthanum compounds; transmission electron microscopy; tunnelling; HfO₂-(HfO₂)_0.75(La₂O₃)_0.25-Al₂O₃-Si; HfO₂:La; Si; TEM; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; atomic layer deposition-derived all-high-k-based structures; blocking layer; charge trapping flash memory; nanocrystals; temperature 800 degC; time 1 s; transmission electron microscopic; tunneling layer; voltage -1.1 V; voltage 1.1 V; voltage 9 V; Aluminum oxide; Annealing; Charge carrier processes; Films; Hafnium compounds; Nanocrystals; Silicon; ALD; charge trapping flash memory; nanocrystals;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137098

Filename

6137098