Title :
The trench planar insulated gate bipolar transistor (TPIGBT)
Author :
Spulber, O. ; Narayanan, E. M Sankara ; De Souza, M.M. ; Sweet, M. ; Hardikar, S. ; Subhas Chandra Bose, J.V.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
A new type of IGBT structure, with a trench gate placed between P-well cathodes, is proposed. The device, called the trench-planar IGBT (TPIGBT) has been analysed in detail in terms of its on-state performance, resistive turn-off and inductive switching losses, and compared to a reference planar, fine-lithography IGBT. Simulation results demonstrate that even the use of shallow trench of 3 μm can result in a low on-state voltage drop, as a result of enhanced electron injection achieved through hole pile-up. However, the increased concentration of mobile charges, can result in an increase in the turn-off time and higher energy losses in comparison to a planar IGBT, even though these losses are lower than those of the trench IGBTs
Keywords :
insulated gate bipolar transistors; IGBT structure; P-well cathodes; TPIGBT; enhanced electron injection; higher energy losses; hole pile-up; inductive switching losses; low on-state voltage drop; mobile charges concentration; on-state performance; reference planar fine-lithography IGBT; resistive turn-off; trench gate; trench planar insulated gate bipolar transistor; trench-planar IGBT;
Conference_Titel :
Recent Advances in Power Devices (Ref. No. 1999/104), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19990603
