• DocumentCode
    3121962
  • Title

    High performance charge-trapping flash memory with highly-scaled trapping layer

  • Author

    Chin, Albert ; Tsai, C.Y. ; Wang, Hong

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    7-9 Nov. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si3N4-thickness (ENT) trapping layer <;4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 106 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.
  • Keywords
    flash memories; silicon compounds; ENT trapping layer; Si3N4; charge-trapping flash memory; equivalent-Si3N4-thickness; highly-scaled trapping layer; memory device performance; temperature 125 C; ultra-thin ENT trapping thickness; voltage 3.1 V; Capacitance-voltage characteristics; Charge carrier processes; Flash memory; Hafnium compounds; Hysteresis; Nonvolatile memory; Silicon; CT flash; Charge-trapping flash; ENT; high-κ; non-volatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1428-3
  • Type

    conf

  • DOI
    10.1109/NVMTS.2011.6137106
  • Filename
    6137106
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3121962