Title :
High performance charge-trapping flash memory with highly-scaled trapping layer
Author :
Chin, Albert ; Tsai, C.Y. ; Wang, Hong
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
We report a novel charge-trapping (CT) flash memory device with highly scaled equivalent-Si3N4-thickness (ENT) trapping layer <;4 nm. This device shows a large 10-year extrapolated retention window of 3.1 V at 125°C and excellent endurance of 106 cycles, under the fast 100 μs and low ±16 V program/erase. These excellent memory device performances and ultra-thin ENT trapping thickness are the enable technology to continuously downscale the flash memory.
Keywords :
flash memories; silicon compounds; ENT trapping layer; Si3N4; charge-trapping flash memory; equivalent-Si3N4-thickness; highly-scaled trapping layer; memory device performance; temperature 125 C; ultra-thin ENT trapping thickness; voltage 3.1 V; Capacitance-voltage characteristics; Charge carrier processes; Flash memory; Hafnium compounds; Hysteresis; Nonvolatile memory; Silicon; CT flash; Charge-trapping flash; ENT; high-κ; non-volatile memory;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137106
