DocumentCode :
3122038
Title :
Crystallinity and its influence on physical and magnetic properties in phase change magnetic materials
Author :
Huang, J.C. ; Song, W.D. ; Shi, L.P. ; Zhao, R. ; Chong, T.C. ; Bain, J.A. ; Schlesinger, T.E.
Author_Institution :
Data Storage Inst., Singapore, Singapore
fYear :
2011
fDate :
7-9 Nov. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Films of crystalline and amorphous Fe12(Ge2Sb2Te5)88 were prepared using laser synthesis from a stoichiometric target. The crystalline film, prepared at 300 °C was found to be in the hexagonal close packed (HCP) structure while the film prepared at room temperature was found to be amorphous. The crystalline film showed clear magnetic hysteresis, while the amorphous and the 220 °C prepared film exhibited weaker magnetic properties. The crystallization temperature of the amorphous Fe12(Ge2Sb2Te5)88 as extracted from resistance temperature measurements was found to be 168 °C, comparable to 178 °C for pure Ge2Sb2Te5. Lastly, the reflectivity spectrum showed the typical reflectivity contrast between crystalline or amorphous Fe12(Ge2Sb2Te5)88 films - as expected from phase change films.
Keywords :
crystallisation; iron compounds; laser deposition; magnetic hysteresis; magnetic thin films; phase change materials; Fe12(Ge2Sb2Te5)88; amorphous materials; crystalline film; crystallinity; crystallization; hexagonal close packed structure; magnetic hysteresis; magnetic properties; phase change magnetic materials; physical properties; reflectivity spectrum; resistance temperature; temperature 220 degC; temperature 293 K to 298 K; temperature 300 degC; Crystallization; Films; Magnetic properties; Magnetization; Phase change materials; Reflectivity; Temperature measurement; Fe-doped; FeGST; Magnetic; Phase-change;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
Type :
conf
DOI :
10.1109/NVMTS.2011.6137109
Filename :
6137109
Link To Document :
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