• DocumentCode
    3122085
  • Title

    [Copyright notice]

  • fYear
    2011
  • fDate
    7-9 Nov. 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The following topics are dealt with: phase change memory; resistive switching memory; FeRAM; and resistive random access memory.
  • Keywords
    ferroelectric storage; phase change memories; switching circuits; FeRAM; phase change memory; resistive random access memory; resistive switching memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1428-3
  • Type

    conf

  • DOI
    10.1109/NVMTS.2011.6137112
  • Filename
    6137112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3122085