Operation of single-flux-quantum logic cells based on all-NbN integrated circuit technology

Author

Terai, Hirotaka ; Makise, Kazumasa ; Zhen Wang

Author_Institution

Adv. ICT Res. Inst., Nat. Inst. of Inf. & Commun. Technol., Kobe, Japan

fYear

2013

fDate

7-11 July 2013

Firstpage

1

Lastpage

3

Abstract

We developed NbN-based SFQ circuits consisting of high-quality epitaxial NbN/AlN/NbN trilayer grown on MgO (100) substrate. The SFQ logic cells such as JTL, DC/SFQ converter, voltage driver, pulse splitter, TFF, and CB were designed by setting the critical current density J_C at 2.5 kA/cm². We succeeded in demonstrating correct operations of all the designed SFQ cells, but the J_C range allowing the operation was quite narrow as around 70% for the designed value. The circuit simulation revealed that the TFF cell requires the J_C range from 65% to 115% for the correct operation, while the DC/SFQ converter was not operational for the J_C of more than 70%.

Keywords

aluminium compounds; circuit simulation; critical current density (superconductivity); epitaxial layers; flip-flops; integrated circuit technology; niobium compounds; superconducting logic circuits; DC-SFQ converter; MgO; NbN-AlN-NbN; T-flip flop; TFF cell; circuit simulation; critical current density; high quality epitaxial trilayer; integrated circuit technology; pulse splitter; superconducting single-flux-quantum logic cells; voltage driver; Cooling; Fabrication; Inductance; Josephson junctions; Junctions; Superconducting integrated circuits; NbN integrated circuit; operating margin; superconducting single flux quantum circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Superconductive Electronics Conference (ISEC), 2013 IEEE 14th International

Conference_Location

Cambridge, MA

Print_ISBN

978-1-4673-6369-3

Type

conf

DOI

10.1109/ISEC.2013.6604278

Filename

6604278