Title :
Effect of barrier geometry for HTS ion damage Josephson junctions
Author :
Ouanani, S. ; Crete, D. ; Kermorvant, J. ; Lemaitre, Y. ; Marcilhac, B. ; Mage, J.C. ; Lesueur, J. ; Bergeal, N. ; Feuillet-Palma, C. ; Ulysse, C. ; Mailly, D.
Author_Institution :
Unite Mixte de Phys., Thales, Palaiseau, France
Abstract :
The large area (2D) technology for high temperature superconducting (HTS) Josephson junctions and circuits we are developing is based on the ion damage process established at LPEM [1, 2]. The aim of this work was to do a statistical analysis of the effect of geometrical parameters on Josephson junctions properties. Only junction length and barrier thickness are varied; film thickness is kept constant at a nominal 150nm. Statistical analysis of characteristic parameters (Ic, Rn, temperature range of operation...) is presented.
Keywords :
Josephson effect; high-temperature superconductors; statistical analysis; superconducting junction devices; HTS ion damage Josephson junctions; LPEM; barrier geometry; circuits; film thickness; high temperature superconducting Josephson junctions; ion damage process; large area 2D technology; statistical analysis; Fabrication; High-temperature superconductors; Josephson junctions; Junctions; Superconducting integrated circuits; Temperature; Temperature measurement; Josephson junction; high critical temperature; ion damage; irradiation; superconductivity;
Conference_Titel :
Superconductive Electronics Conference (ISEC), 2013 IEEE 14th International
Conference_Location :
Cambridge, MA
Print_ISBN :
978-1-4673-6369-3
DOI :
10.1109/ISEC.2013.6604297
