Title :
A Block-oriented Ram With Half-sized Dram Cell And Quasi-folded Data-line Architecture
Author :
Kimura, K. ; Salkata, T. ; Itch, K. ; Kaga, T. ; Nishida, T. ; Kawamoto, Y.
Author_Institution :
Hitachi Ltd.
Keywords :
Capacitance; Circuits; Niobium; Noise figure; Noise level; Noise reduction; Random access memory; Read-write memory; Registers; Switches;
Conference_Titel :
Solid-State Circuits Conference, 1991. Digest of Technical Papers. 38th ISSCC., 1991 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-644-6
DOI :
10.1109/ISSCC.1991.689083
