Title :
A new threshold voltage model for deep-submicron MOSFET´s with nonuniform substrate dopings
Author :
Zhang, Wen-Liang ; Yang, Zhi-Lian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A simple but accurate threshold voltage model for deep-submicron MOSFET´s with nonuniform dopings is described in this paper. A simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter δ, the actual gradual doping profile can be obtained. The model developed is in good agreement with two-dimensional numerical simulation
Keywords :
MOSFET; doping profiles; semiconductor device models; deep-submicron MOSFET; gradual doping profile; hyperbola function; nonuniform substrate doping; quasi-delta substrate doping profile; threshold voltage model; two-dimensional numerical simulation; Degradation; Doping profiles; MOSFETs; Microelectronics; Numerical simulation; Parasitic capacitance; Quasi-doping; Semiconductor process modeling; Smoothing methods; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642326
