The piezo-Hall effect in n-silicon for arbitrary crystal orientation

The piezo-Hall effect describes the change of the Hall coefficient due to mechanical stress. The question arises, if there is any distinct wafer orientation where the piezo-Hall effect is minimized. To this end, a general expression describing the piezo-Hall effect for arbitrary crystal orientation is deduced for the first time. For n-type silicon with low doping concentrations <10¹⁶ cm^-3 six plots show that the sensitivity of n-doped Hall plates in {111} planes is least influenced by mechanical stress whereas {100} wafer planes are the worst case and 15 times more sensitive to package induced mechanical stress.