Title :
Industrial synthesis of PECVD silicon nitride passivation film
Author_Institution :
Dept. of Phys. & Mater. Sci, City Univ. of Hong Kong, Kowloon, Hong Kong
Abstract :
Plasma enhancement chemical vapour deposition (PECVD) silicon nitride can grow on alloying device at low temperature. So it can be used as passivation film on devices. The type DD-P250 deposition equipment used in several factories is a special purpose one for PECVD silicon nitride deposition. In this paper the author study various deposition parameters affecting thin film properties with the equipment used in manufacturing line. The optimum ranges of various deposition parameters and the conditions of depositing high quality silicon nitride passivation film are report. A new quantitative explanation is given in this paper on index of refraction vs. velocity of growing
Keywords :
passivation; plasma CVD; refractive index; silicon compounds; DD-P250 equipment; PECVD; Si3N4; alloying device; growth velocity; index of refraction; industrial synthesis; low temperature manufacture; plasma enhancement chemical vapour deposition; silicon nitride passivation film; Alloying; Chemical vapor deposition; Passivation; Plasma applications; Plasma chemistry; Plasma devices; Plasma temperature; Production facilities; Semiconductor films; Silicon;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642331
