Transport of charge and electronic structure of traps in SONOS structures

Author

Gritsenko, V.A. ; Novikov, Yu.N. ; Morokov, Yu.N. ; Wong, H.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

1997

fDate

35672

Firstpage

74

Lastpage

77

Abstract

In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si₃N₄ and 1.5 eV for hole injecting from Au/Si₃N₄ interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si₃N₄ can traps both electrons and holes

Keywords

MINDO calculations; MIS structures; electron traps; hole traps; semiconductor-insulator-semiconductor structures; tunnelling; AI/Si₃N₄ interface; Al-Si₃N₄; Au-Si₃N₄; Au/Si₃N₄ interface; MINDO/3; MNOS structure; SONOS structure; barrier height; charge transport; electron injection; electronic structure; energy band diagram; hole injection; numerical simulation; traps; tunneling; Bonding; Charge carrier processes; Dielectrics; EPROM; Electron traps; Gold; Nonvolatile memory; Numerical simulation; Photoelectricity; SONOS devices; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642335

Filename

642335