DocumentCode :
3123557
Title :
In-plane and out-of-plane dielectric constant measurement techniques for sub-micron MOS devices
Author :
Tee, Chua Chee ; Sarkar, Gautam ; Meng, Simon Chooi Yew ; Yu, David Lim Hsuan ; Chan, Lap
Author_Institution :
Sch. of Appl. Sci., Nanyang Technol. Univ., Singapore
fYear :
1997
fDate :
35672
Firstpage :
86
Lastpage :
89
Abstract :
This paper focuses on the techniques adopted to carefully characterize the dielectric constant of low k SOG (spin-on-glass), both for in-plane and out-of-plane measurements. In the case of out-of-plane dielectric constant measurement, the capacitance-voltage (C-V) sweep is utilised to measure the SOG capacitance. For in-plane dielectric constant measurement, intra capacitors are required and a novel technique of extracting coupling capacitance is presented
Keywords :
MIS devices; MOS capacitors; integrated circuit measurement; permittivity measurement; semiconductor device testing; C-V sweep; SOG capacitance; capacitance-voltage sweep; coupling capacitance extraction; dielectric constant measurement techniques; in-plane measurement technique; intra capacitors; out-of-plane measurement technique; spin-on-glass; submicron MOS devices; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Chemical vapor deposition; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric substrates; Inorganic materials; Integrated circuit interconnections;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
Type :
conf
DOI :
10.1109/HKEDM.1997.642338
Filename :
642338
Link To Document :
بازگشت