In-plane and out-of-plane dielectric constant measurement techniques for sub-micron MOS devices

Author

Tee, Chua Chee ; Sarkar, Gautam ; Meng, Simon Chooi Yew ; Yu, David Lim Hsuan ; Chan, Lap

Author_Institution

Sch. of Appl. Sci., Nanyang Technol. Univ., Singapore

fYear

1997

fDate

35672

Firstpage

86

Lastpage

89

Abstract

This paper focuses on the techniques adopted to carefully characterize the dielectric constant of low k SOG (spin-on-glass), both for in-plane and out-of-plane measurements. In the case of out-of-plane dielectric constant measurement, the capacitance-voltage (C-V) sweep is utilised to measure the SOG capacitance. For in-plane dielectric constant measurement, intra capacitors are required and a novel technique of extracting coupling capacitance is presented

Keywords

MIS devices; MOS capacitors; integrated circuit measurement; permittivity measurement; semiconductor device testing; C-V sweep; SOG capacitance; capacitance-voltage sweep; coupling capacitance extraction; dielectric constant measurement techniques; in-plane measurement technique; intra capacitors; out-of-plane measurement technique; spin-on-glass; submicron MOS devices; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Chemical vapor deposition; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric substrates; Inorganic materials; Integrated circuit interconnections;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642338

Filename

642338