Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment

Author

Huang, M.Q. ; Lai, P.T. ; Xu, J.P. ; Zeng, S.H. ; Li, G.Q. ; Cheng, Y.C.

Author_Institution

Dept. of Appl. Phys., South China Univ. of Technol., Guangzhou, China

fYear

1997

fDate

35672

Firstpage

90

Lastpage

93

Abstract

A low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si-SiO ₂ interface induced by the backsurface bombardment

Keywords

MIS devices; MOS capacitors; argon; hot carriers; ion beam effects; semiconductor device reliability; semiconductor-insulator boundaries; 550 eV; Ar; MOSFET; Si-SiO₂; Si-SiO₂ interface; backsurface Ar bombardment; hot-electron injection; hot-electron-induced degradation suppression; hot-electron-induced interface degradation; interface characteristics; low-energy Ar ion beam; metal-oxide-semiconductor devices; optimal bombardment time; physical mechanism; polysilicon-gate MOS capacitors; stress compensation; turn-around behaviour; Annealing; Argon; Degradation; FETs; Hot carrier injection; Hot carriers; MOS capacitors; MOSFETs; Nitrogen; Secondary generated hot electron injection; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642339

Filename

642339