Microwave-frequency operation of resonant tunneling high electron mobility transistors

Author

Chen, Kevin J.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

fYear

1997

fDate

35672

Firstpage

106

Lastpage

109

Abstract

Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency f_T of 28.6 GHz and a maximum power gain cutoff frequency f_max of 90 GHz were obtained for an RTHEMT with a 0.7-μm gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency

Keywords

III-V semiconductors; S-parameters; frequency multipliers; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave frequency convertors; resonant tunnelling transistors; 0.7 micron; 28.6 GHz; 90 GHz; InP; InP-based RTHEMT; frequency multiplier applications; high conversion efficiency; high electron mobility transistors; high order harmonics multiplication; large-signal characteristics; maximum current gain cutoff frequency; microwave frequency operation; resonant tunneling HEMT; small-signal S-parameter measurement; Current measurement; Cutoff frequency; Electrons; Frequency measurement; Gain measurement; HEMTs; MODFETs; Power measurement; Resonant tunneling devices; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642343

Filename

642343