Title :
Microwave-frequency operation of resonant tunneling high electron mobility transistors
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
Abstract :
Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter measurement, a maximum current gain cutoff frequency fT of 28.6 GHz and a maximum power gain cutoff frequency fmax of 90 GHz were obtained for an RTHEMT with a 0.7-μm gate length. Large-signal characteristics are also reported, showing the potential of RTHEMTs for frequency multiplier applications featuring high order harmonics multiplication with high conversion efficiency
Keywords :
III-V semiconductors; S-parameters; frequency multipliers; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave frequency convertors; resonant tunnelling transistors; 0.7 micron; 28.6 GHz; 90 GHz; InP; InP-based RTHEMT; frequency multiplier applications; high conversion efficiency; high electron mobility transistors; high order harmonics multiplication; large-signal characteristics; maximum current gain cutoff frequency; microwave frequency operation; resonant tunneling HEMT; small-signal S-parameter measurement; Current measurement; Cutoff frequency; Electrons; Frequency measurement; Gain measurement; HEMTs; MODFETs; Power measurement; Resonant tunneling devices; Scattering parameters;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642343
