Flexible threshold voltage 4-terminal FinFETs

Author

Liu, Yongxun ; Masahara, Meishoku ; Ishii, Kenichi ; Suzuki, Eiichi

Author_Institution

Nanoelectronics Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

fYear

2004

fDate

2004

Firstpage

91

Lastpage

96

Abstract

Four-terminal (4T) FinFETs with independent double gates and an ideal rectangular cross-section Si-fin channel have successfully been fabricated by using newly developed orientation-dependent wet etching. The flexible threshold voltage (V_th) controllability by one of the double gates arid by synchronized driving mode operation is systematically examined for the fabricated 4T-FinFFTs with different silicon (Si)-fin thicknesses (T_Si´s). The experimental results reveal that the thinner T_Si is effective to accomplish a flexible V_th tuning. The developed processes are very attractive to the fabrication of the advanced 4T-FinFETs for flexible function VLSI circuits.

Keywords

MOSFET; buried layers; chemical mechanical polishing; etching; silicon-on-insulator; CMP process; buried oxide layers; electron-beam stepping; flexible function VLSI circuits; flexible threshold voltage FinFET; four-terminal FinFET; ideal rectangular cross-section; independent double gates; lightly doped p-type silicon-on-insulator; orientation-dependent wet etching; power controllable circuits; synchronized driving mode operation; threshold voltage controllability; Circuit optimization; Controllability; Fabrication; FinFETs; MOSFET circuits; Nanoelectronics; Silicon; Threshold voltage; Very large scale integration; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309915

Filename

1309915