Advanced double-gate fully-depleted silicon-on-insulator (DG-FDSOI) device and device impact on circuit design & power management

Author

Dao, Thuy

Author_Institution

Motorola SPS, Austin, TX, USA

fYear

2004

fDate

2004

Firstpage

99

Lastpage

103

Abstract

Power consumption including leakage current is becoming one of the most important limiting factors in VLSI, especially in the sub-65nm technologies. While technologies are facing multiple challenges in scaling, there have been successful developments on reduction of power consumption and leakage current in circuit and system design techniques based on the cooperation between two traditionally separated technical fields - technology and design. The benefits of separate gate access capability of DG-FDSOI technology on supporting these kinds of cooperation techniques have been addressed together with the impact on circuit designs which take advantages of this technology.

Keywords

CMOS integrated circuits; MOSFET; VLSI; leakage currents; low-power electronics; silicon-on-insulator; CMOS technology platform; VLSI limiting factors; advanced double-gate fully-depleted SOI; circuit design; device integration; leakage current; power consumption; power management; separate gate access capability; CMOS technology; Circuit synthesis; Energy consumption; Energy management; Leakage current; Logic circuits; MOSFETs; Silicon on insulator technology; Technology management; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309917

Filename

1309917