DocumentCode :
3124084
Title :
Plasma damage considerations involving metal-insulator-metal (MIM) capacitors
Author :
Connell, Barry O. ; Thibeault, Todd ; Chaparala, Prasad
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
fYear :
2004
fDate :
2004
Firstpage :
123
Lastpage :
126
Abstract :
Impact on MIM capacitor reliability with respect to plasma damage is investigated for different dielectric films and layout variations. MIM capacitor reliability is found to be sensitive to dielectric type, MIM layout and bottom plate metal processing. Plasma Process steps responsible for affecting MIM reliability are identified.
Keywords :
MIM devices; leakage currents; passivation; plasma materials processing; semiconductor device breakdown; semiconductor device reliability; sputter etching; thin film capacitors; MIM capacitor reliability; MM layout; bottom plate metal processing; breakdown voltage; cap leakage; damage susceptibility; dielectric type; increased leakage; layout variations; plasma damage; process flow; reliable process module; Capacitance; Circuits; Dielectric films; Frequency; Linearity; MIM capacitors; Metal-insulator structures; Plasma materials processing; Q factor; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
Type :
conf
DOI :
10.1109/ICICDT.2004.1309925
Filename :
1309925
Link To Document :
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