Title :
Deep Ultraviolet Light Emitting Diodes
Author_Institution :
South Carolina Univ., Columbia, SC
Abstract :
In this paper, light-emitting devices based on III-nitride semiconductors offer many advantages including miniaturization, reliability, reduced costs, low power consumption, and ultimately a choice of wavelength of operation between 365 and 200 nm is discussed
Keywords :
III-V semiconductors; LED lamps; 365 to 200 nm; III-nitride semiconductors; deep ultraviolet light emitting diodes; light-emitting devices; Aluminum gallium nitride; Annealing; Fluorescent lamps; Gallium nitride; Geometry; Gold; LED lamps; Light emitting diodes; MOCVD; Purification;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278803
