Title :
SOI charging prevention: chip-level net tracing and diode protection
Author :
Hook, Terence B. ; Bonges, Henry ; Harmon, David ; Lai, Wing
Author_Institution :
IBM Microeletronics, Essex Junction, VT, USA
Abstract :
In this paper we show that the SOI FET is conductive during processing, and also that a FET shunted across the gate and source/drain of another transistor does in fact protect that device against charging damage.
Keywords :
MOSFET; Weibull distribution; semiconductor device breakdown; silicon-on-insulator; surface charging; SOI FET; SOI charging prevention; TDDB; Weibull plot; charging damage; chip-level net tracing; conductive behaviour; diode protection; second-metal area; Appropriate technology; Chip scale packaging; Circuits; Conductors; Diodes; FETs; Metallization; Microelectronics; Protection; Wiring;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309926
