• DocumentCode
    3124099
  • Title

    SOI charging prevention: chip-level net tracing and diode protection

  • Author

    Hook, Terence B. ; Bonges, Henry ; Harmon, David ; Lai, Wing

  • Author_Institution
    IBM Microeletronics, Essex Junction, VT, USA
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    In this paper we show that the SOI FET is conductive during processing, and also that a FET shunted across the gate and source/drain of another transistor does in fact protect that device against charging damage.
  • Keywords
    MOSFET; Weibull distribution; semiconductor device breakdown; silicon-on-insulator; surface charging; SOI FET; SOI charging prevention; TDDB; Weibull plot; charging damage; chip-level net tracing; conductive behaviour; diode protection; second-metal area; Appropriate technology; Chip scale packaging; Circuits; Conductors; Diodes; FETs; Metallization; Microelectronics; Protection; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
  • Print_ISBN
    0-7803-8528-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2004.1309926
  • Filename
    1309926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3124099