Title :
InGaN/GaN based LEDs with electroluminescence in violet, blue, and green tuned by epitaxial growth temperature
Author :
Sari, Emre ; Nizamoglu, Sedat ; Ozel, Tuncay ; Demir, Hilmi Volkan ; Inal, Ayse ; Ulker, Erkin ; Ozbay, Ekmel ; Dikme, Yilmaz ; Heuken, Micheal
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara
Abstract :
In this work, we present a full set of InGaN LEDs based on a single optimal InGaN/GaN quantum design with emission wavelengths spanning from green to blue to violet by tuning the active layer growth temperature to precisely control InN incorporation into the quantum structures
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; optical design techniques; semiconductor epitaxial layers; semiconductor growth; InGaN-GaN; LED; electroluminescence; epitaxial growth temperature tuning; quantum structures; semiconductor quantum design; Electroluminescence; Epitaxial growth; Gallium nitride; Light emitting diodes; Nanotechnology; Photoluminescence; Physics; Stimulated emission; Temperature dependence; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278805
