DocumentCode
3124268
Title
MnO/TeO2 thin films as optical gamma radiation sensors
Author
Arshak, Khalil I. ; Molloy, Jonathan ; Korostynska, Olga ; Harris, John
Author_Institution
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
1285
Abstract
This work investigates the effects of γ-rays on the optical properties of pure and mixed oxide materials, namely MnO and TeO2, for their possible application as thin film optical gamma radiation sensors. The values of the optical band gap Eopt were obtained in view of the Mott and Davis theory. All samples showed a decrease in Eopt with an increase in radiation dose to a certain level, which was found to be composition-dependent. Films with 100 wt.% MnO exhibited the highest sensitivity to low doses of radiation, showing a strong decline in the optical band gap value from 0.64 eV before irradiation to 0.54 eV after a dose of 1.14 mSv. It was experimentally confirmed that both the sensitivity and the working dose range of radiation sensors can be controlled by the composition of the materials used.
Keywords
electron device testing; energy gap; gamma-ray detection; manganese compounds; photonic band gap; tellurium compounds; thin film devices; 0.54 eV; 0.64 eV; 1.14 mSv; MnO; MnO thin film optical gamma radiation sensors; MnO-TeO2; MnO/TeO2 thin film optical gamma radiation sensors; Mott and Davis theory; TeO2; TeO2 thin film optical gamma radiation sensors; composition-dependent values; gamma ray effects; materials composition; mixed oxide materials; optical band gap; pure oxide materials; radiation dose; sensitivity; working dose range; Electrodes; Electromagnetic wave absorption; Gamma ray detectors; Gamma rays; Optical films; Optical sensors; Paramagnetic materials; Thin film sensors; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2004. Proceedings of IEEE
Print_ISBN
0-7803-8692-2
Type
conf
DOI
10.1109/ICSENS.2004.1426416
Filename
1426416
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