Title :
Carrier heating from holes in the valence band in a bulk SOA
Author :
Li, Z. ; Mork, J. ; Vazquez, J. Molina ; Khoe, G.D. ; Dorren, H.J.S. ; Lenstra, D.
Author_Institution :
COM Res. Center, Tech. Univ. Denmark, Lyngby
Abstract :
Carrier heating in the valence band of a semiconductor optical amplifier is found to be significant compared to that from the conduction band, although the temperature change is smaller. Therefore it cannot be neglected
Keywords :
conduction bands; semiconductor optical amplifiers; thermo-optical effects; valence bands; bulk SOA; carrier heating; conduction band; holes; lattice temperature change; semiconductor optical amplifier; valence band; Charge carrier density; Heating; High speed optical techniques; Laser theory; Nonlinear optics; Optical scattering; Semiconductor lasers; Semiconductor optical amplifiers; Temperature; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278813
