• DocumentCode
    3124329
  • Title

    Carrier heating from holes in the valence band in a bulk SOA

  • Author

    Li, Z. ; Mork, J. ; Vazquez, J. Molina ; Khoe, G.D. ; Dorren, H.J.S. ; Lenstra, D.

  • Author_Institution
    COM Res. Center, Tech. Univ. Denmark, Lyngby
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    Carrier heating in the valence band of a semiconductor optical amplifier is found to be significant compared to that from the conduction band, although the temperature change is smaller. Therefore it cannot be neglected
  • Keywords
    conduction bands; semiconductor optical amplifiers; thermo-optical effects; valence bands; bulk SOA; carrier heating; conduction band; holes; lattice temperature change; semiconductor optical amplifier; valence band; Charge carrier density; Heating; High speed optical techniques; Laser theory; Nonlinear optics; Optical scattering; Semiconductor lasers; Semiconductor optical amplifiers; Temperature; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.278813
  • Filename
    4054050
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3124329