• DocumentCode
    3124402
  • Title

    Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well

  • Author

    Xu, LiFang ; Patel, D. ; Menoni, C.S. ; Yeh, Jeng Ya ; Huang, J.Y.T. ; Mawst, L.J. ; Tansu, Nelson

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    58
  • Lastpage
    59
  • Abstract
    An electron effective mass (me*) of (0.11plusmn0.015)m0 is experimentally determined in high indium content InGaAsN quantum well. The impact of the large me * in the material differential gain is analyzed through a gain model
  • Keywords
    III-V semiconductors; binding energy; effective mass; excitons; gallium arsenide; gallium compounds; indium compounds; optical materials; photoluminescence; quantum well lasers; semiconductor quantum wells; InGaAsN-GaAs; electron effective mass; exciton binding energy; gain model; material differential gain; photoluminescence; strain compensated single quantum well; Capacitive sensors; Effective mass; Electrons; Excitons; Gallium arsenide; Indium gallium arsenide; Nitrogen; Quantum computing; Temperature; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
  • Conference_Location
    Montreal, Que.
  • Print_ISBN
    0-7803-9555-7
  • Electronic_ISBN
    0-7803-9555-7
  • Type

    conf

  • DOI
    10.1109/LEOS.2006.278835
  • Filename
    4054054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3124402