Title :
Exciton binding energy and electron effective-mass in strain compensated InGaAsN/GaAs single Quantum Well
Author :
Xu, LiFang ; Patel, D. ; Menoni, C.S. ; Yeh, Jeng Ya ; Huang, J.Y.T. ; Mawst, L.J. ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO
Abstract :
An electron effective mass (me*) of (0.11plusmn0.015)m0 is experimentally determined in high indium content InGaAsN quantum well. The impact of the large me * in the material differential gain is analyzed through a gain model
Keywords :
III-V semiconductors; binding energy; effective mass; excitons; gallium arsenide; gallium compounds; indium compounds; optical materials; photoluminescence; quantum well lasers; semiconductor quantum wells; InGaAsN-GaAs; electron effective mass; exciton binding energy; gain model; material differential gain; photoluminescence; strain compensated single quantum well; Capacitive sensors; Effective mass; Electrons; Excitons; Gallium arsenide; Indium gallium arsenide; Nitrogen; Quantum computing; Temperature; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278835
