DocumentCode
3124423
Title
Linewidth Enhancement Factor of a 1.3μm GaInNAs/GaAs Laser by Optical Gain Analysis
Author
Zhang, X. ; Gupta, J.A. ; Barrios, P.J. ; Pakulski, G. ; Hall, T.J.
fYear
2006
fDate
Oct. 29 2006-Nov. 2 2006
Firstpage
60
Lastpage
61
Abstract
An experimental determination of the linewidth enhancement factor, alpha, of a GaInNAs/GaAs laser is presented. The modal gain and Fabry-Perot mode shift with injection current were analysed to derive a value of alpha=2.8 at threshold for the 1278 nm emission
Keywords
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; semiconductor lasers; spectral line breadth; 1.3 micron; 1278 nm; Fabry-Perot mode shift; GaInNAs-GaAs; GaInNAs-GaAs laser; injection current; linewidth enhancement factor; optical gain analysis; Charge carrier density; Fabry-Perot; Fiber lasers; Frequency modulation; Gain measurement; Gallium arsenide; Laser modes; Laser theory; Optical refraction; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9556-5
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278836
Filename
4054055
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