DocumentCode
3124538
Title
Surface electronic structure of light-emitting porous polycrystalline silicon thin films
Author
Han, P.G. ; Wong, H. ; Poon, M.C.
Author_Institution
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong
fYear
1997
fDate
35672
Firstpage
136
Lastpage
139
Abstract
Surface electronic structure of light-emitting porous polycrystalline silicon (PPS) is studied using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence effect can only be observed in thin films with trace amounts of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface
Keywords
X-ray photoelectron spectra; elemental semiconductors; nanostructured materials; passivation; photoluminescence; porous materials; semiconductor thin films; silicon; surface structure; Si; X-ray photoelectron spectroscopy; light-emitting porous polysilicon thin films; nanoclusters; passivation; photoluminescence effect; surface electronic structure; Amorphous silicon; Chemicals; Luminescence; Oxygen; Passivation; Photoluminescence; Semiconductor films; Semiconductor thin films; Silicon; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN
0-7803-3802-2
Type
conf
DOI
10.1109/HKEDM.1997.642350
Filename
642350
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