A high density IC compatible microtransducer/diaphragm design on micro-cavity SOI technology

Author

Lee, Mike Myung-Ok ; Moon, Yang-Ho

Author_Institution

Dept. of Inf. & Commun. Eng., Dongshin Univ., Chonnam, South Korea

fYear

1997

fDate

35672

Firstpage

140

Lastpage

144

Abstract

This paper demonstrates the cross-functional results for stress analyses (targeting 5 μm deflection and 1000 MPa stress as maximum at various applicable pressure ranges), for finding permissible diaphragm dimension by output sensitivity, and piezoresistive sensor theory from two-type SOI (Silicon-On-Insulator) structures, and for showing the most feasible deflection and small stress at various ambient pressure from double SOI based sensor. The SOI micro-cavity formed the sensors would be promising to integrate with current CMOS drivers onto monolithic chip in the future

Keywords

diaphragms; microsensors; piezoresistive devices; pressure sensors; silicon-on-insulator; stress analysis; transducers; CMOS driver; SOI technology; deflection; diaphragm; high density IC; microcavity; microtransducer; monolithic chip; piezoresistive sensor; stress analysis; Chemical sensors; Chemical technology; Electronics industry; Etching; Intelligent sensors; Piezoresistance; Residual stresses; Shape; Silicon; Silicon on insulator technology; Stress; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642351

Filename

642351