DocumentCode :
3124762
Title :
Ultraviolet-sensitive AlGaN-based surface acoustic wave devices
Author :
Ciplys, D. ; Shur, M.S. ; Pala, N. ; Sereika, A. ; Rimeika, R. ; Gaska, R. ; Fareed, Q.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
1345
Abstract :
Two types of novel ultraviolet-sensitive III-nitride based surface acoustic wave devices are presented. We demonstrate the AlxGal-xN-based surface acoustic wave delay-line oscillator, which is applied as an ultraviolet sensor capable of solar-blind operation with remote wireless pickup of the output signal. Also, we report on the SAW-induced high-frequency resistance modulation effect, which is dramatically increased under ultraviolet illumination.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; interdigital transducers; surface acoustic wave oscillators; surface acoustic wave sensors; ultraviolet detectors; wide band gap semiconductors; AlGaN; IDT; SAW delay-line oscillator; SAW-induced high-frequency resistance modulation effect; UV illumination; UV-sensitive surface acoustic wave devices; optical sensors; remote wireless pickup; solar-blind operation; ultraviolet sensor; ultraviolet-sensitive SAW devices; Acoustic sensors; Acoustic waves; Gallium nitride; Optical sensors; Optical surface waves; Oscillators; Photonic band gap; Surface acoustic wave devices; Surface acoustic waves; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
Type :
conf
DOI :
10.1109/ICSENS.2004.1426432
Filename :
1426432
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3124762
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