Title :
Trends in gate stack engineering
Author :
Nouri, F. ; Kher, Sanjay ; Narwankar, P. ; Sharangpani, Rahul ; Muthukrishnan, Shankar ; Kraus, Philip ; Ahmed, Khaled ; Olsen, Chris ; Chua, Mai Cheng ; Cruse, Jim ; Hung, Steven ; Bae, Sang Ho ; Kang, Andrew ; Higashi, Gregg ; Miner, Gary
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
MOSFET scaling requires an increase in the dielectric capacitance and hence a decrease in the dielectric electrical thickness. In this paper, we review the scaling trends for the gate dielectric and the gate electrode as the industry faces the challenges of introducing new materials into production.
Keywords :
MOSFET; dielectric thin films; leakage currents; nitridation; plasma materials processing; thermal stability; MOSFET scaling; clustered gate processing; dielectric capacitance increase; dielectric electrical thickness decrease; gate electrode; gate stack engineering; leakage current density; oxynitrides; plasma nitridation; plasma potential; Boron; Dielectric materials; Electrodes; High-K gate dielectrics; Inorganic materials; MOSFET circuits; Nitrogen; Plasma chemistry; Plasma measurements; Silicon;
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
DOI :
10.1109/ICICDT.2004.1309961
