DocumentCode :
3124880
Title :
Cross-Phase Modulation in GaAs/AlAs Superlattice-Core Waveguides Below the Half Band Gap
Author :
Wagner, S.J. ; Meier, J. ; Helmy, A.S. ; Aitchison, J.S. ; Modotto, D. ; Sorel, M. ; Hutchings, D.C.
Author_Institution :
Edward S. Rogers Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
fYear :
2006
fDate :
Oct. 2006
Firstpage :
90
Lastpage :
91
Abstract :
Cross-phase modulation (XPM) between orthogonally polarized modes is observed in GaAs/AlAs superlattice-core waveguides. With temporal walkoff accounted for, measured XPM coefficients (nX2) yield XPM-to-SPM ratios of 0.75 for TM and 0.43 for TE
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical multilayers; optical waveguides; self-phase modulation; semiconductor superlattices; GaAs-AlAs; TE mode; TM mode; XPM coefficients; cross-phase modulation; orthogonally polarized modes; superlattice-core waveguides; Gallium arsenide; Optical materials; Optical polarization; Optical waveguides; Photonic band gap; Probes; Pulse measurements; Superlattices; Tellurium; Waveguide discontinuities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
Type :
conf
DOI :
10.1109/LEOS.2006.278870
Filename :
4054070
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3124880
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