Reducing FHDP plasma induced damage with silicon-rich oxide and oxynitride barrier layers

Author

McCulloh, H. ; O´Connell, B. ; Drizlikh, S. ; Brisbin, D.

Author_Institution

Nat. Semicond. Corp., South Portland, ME, USA

fYear

2004

fDate

2004

Firstpage

291

Lastpage

294

Abstract

Plasma damage resulting from fluorine doped High Density Plasma Deposition (FHDP) was investigated. A dielectric barrier layer placed either directly under the FHDP or directly over the gate was found to protect the gate oxide from plasma damage. The mechanism by which the dielectric layers counteract plasma damage from upper dielectric layers is investigated.

Keywords

MOSFET; leakage currents; plasma materials processing; semiconductor device breakdown; silicon compounds; sputter etching; NMOS transistor; PMOS transistor; SiO; SiON; charge to breakdown; cumulative distribution; design-rule metal antenna; dielectric barrier layer; etch stop layers; extinction coefficient; fluorine doped high density plasma deposition; gate oxide integrity; gate oxide leakage; intermetal dielectric layer; plasma etching; plasma induced damage; silicon-rich oxide layers; silicon-rich oxynitride layers; transistor gate leakage; Artificial intelligence; Design for quality; Dielectrics; Etching; Gate leakage; MOSFETs; Plasma applications; Plasma density; Plasma devices; Protection;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309965

Filename

1309965