• DocumentCode
    3124974
  • Title

    Atomic scale defects in the Si/SiON system and the negative bias temperature instability

  • Author

    Lenahan, P.M.

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO2-SiON systems which are likely involved in the negative bias temperature instability.
  • Keywords
    MIS structures; MOSFET; dangling bonds; defect states; interface states; paramagnetic resonance; semiconductor device reliability; silicon; silicon compounds; MOS technology; Si-SiO2-SiON; Si-SiON; atomic scale defects; bandgap energy; bond breaking; dangling bonds; defect-hydrogen interactions; electron spin resonance; interface traps; negative bias temperature instability; oxide charge; p-channel MOS field effect transistors; reliability problem; Chemical technology; Chemistry; Hydrogen; Magnetic field measurement; Negative bias temperature instability; Niobium compounds; Nitrogen; Paramagnetic resonance; Silicon; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
  • Print_ISBN
    0-7803-8528-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2004.1309970
  • Filename
    1309970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3124974