Effect of channel width, length, and latent damage on NBTI

Author

Cellere, G. ; Valentini, M.G. ; Paccagnella, Alessandro

Author_Institution

Dept. of Inf. Eng., Padova Univ., Italy

fYear

2004

fDate

2004

Firstpage

303

Lastpage

306

Abstract

pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage.

Keywords

MOSFET; interface states; plasma materials processing; semiconductor device breakdown; semiconductor device reliability; sputter etching; channel length; channel width; high temperature; interface states; latent damage index; latent plasma induced damage; long time reliability; negative bias temperature instability; pMOSFET devices; positive charge trapping; progressive threshold voltage shift; MOSFETs; Negative bias temperature instability; Niobium compounds; Plasma devices; Plasma temperature; Stress; Temperature dependence; Temperature sensors; Threshold voltage; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309971

Filename

1309971