Title :
Controlled Crystal Structure in Patterned InAs Quantum Dot Formation By Selective Area MOCVD
Author :
Wong, P.S. ; Nuntawong, N. ; Xue, L. ; Tatebayashi, J. ; Albrecht, A. ; Rotella, P. ; Brueck, S.R.J. ; Huffaker, D.L.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
Abstract :
We demonstrate the capability to control patterned quantum dot formation through adjusting the growth parameters inside the MOCVD reactor. Effects of altered crystallographic structure are measured using photoluminescence and SEM images
Keywords :
III-V semiconductors; MOCVD; crystal structure; indium compounds; photoluminescence; scanning electron microscopy; semiconductor quantum dots; InAs; MOCVD control patterned InAs quantum dot formation; MOCVD reactor; SEM image; controlled crystal structure pattern; crystallographic structure; photoluminescence; Crystallography; Gallium arsenide; Indium gallium arsenide; Laser excitation; MOCVD; Photoluminescence; Quantum dots; Shape measurement; Stationary state; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278879
