DocumentCode
3125025
Title
Controlled Crystal Structure in Patterned InAs Quantum Dot Formation By Selective Area MOCVD
Author
Wong, P.S. ; Nuntawong, N. ; Xue, L. ; Tatebayashi, J. ; Albrecht, A. ; Rotella, P. ; Brueck, S.R.J. ; Huffaker, D.L.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
fYear
2006
fDate
Oct. 2006
Firstpage
108
Lastpage
109
Abstract
We demonstrate the capability to control patterned quantum dot formation through adjusting the growth parameters inside the MOCVD reactor. Effects of altered crystallographic structure are measured using photoluminescence and SEM images
Keywords
III-V semiconductors; MOCVD; crystal structure; indium compounds; photoluminescence; scanning electron microscopy; semiconductor quantum dots; InAs; MOCVD control patterned InAs quantum dot formation; MOCVD reactor; SEM image; controlled crystal structure pattern; crystallographic structure; photoluminescence; Crystallography; Gallium arsenide; Indium gallium arsenide; Laser excitation; MOCVD; Photoluminescence; Quantum dots; Shape measurement; Stationary state; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.278879
Filename
4054079
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