Title :
Integration of quantum dot optoelectronic devices using selective-area MOCVD
Author :
Mokkapati, S. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; semiconductor quantum dots; InGaAs; InGaAs quantum-dots; MOCVD; integrated photonic device fabrication; integrated quantum dot optoelectronic device; quantum dots growth; Epitaxial layers; Indium gallium arsenide; Laser tuning; MOCVD; Optoelectronic devices; Photonic band gap; Quantum dot lasers; Quantum dots; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278880
