Interface Raman Modes to Study Compositional Intermixing in GaAs/AlAs Superlattice

Author

Scrutton, P. ; Sorel, M. ; Hutchings, D.C. ; Aitchison, J.S. ; Helm, A.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.

fYear

2006

fDate

Oct. 2006

Firstpage

112

Lastpage

113

Abstract

Interface Raman modes were used to study the intermixing of GaAs:AlAs superlattice structures. The intermixing was observed to deprecate the interface mode. This feature was then used to investigate the bandgap modulation in a periodically intermixed grating fabricated in this superlattice structure. Due to their large SNR between intact and intermixed SL material, using IF modes instead of bulk modes a promising avenue for optimizing SL structures that rely on intricate bandgap features defined by QWI

Keywords

III-V semiconductors; Raman spectra; aluminium compounds; gallium arsenide; semiconductor quantum wells; semiconductor superlattices; GaAs-AlAs; GaAs-AlAs superlattice interface structure; bandgap modulation; compositional intermixing; interface Raman modes; periodically intermixed gratings; quantum-well intermixing; Frequency conversion; Gallium arsenide; Integrated circuit technology; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical materials; Optical modulation; Optical sensors; Optical superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

Conference_Location

Montreal, Que.

Print_ISBN

0-7803-9555-7

Electronic_ISBN

0-7803-9555-7

Type

conf

DOI

10.1109/LEOS.2006.278881

Filename

4054081