DocumentCode :
3125083
Title :
Time evolution of VTH distribution under BT stress in ultra-thin gate oxides
Author :
Mitani, Yuichiro ; Satake, Hideki
Author_Institution :
Corporate R & D Center, Toshiba Corp., Yokohama, Japan
fYear :
2004
fDate :
2004
Firstpage :
341
Lastpage :
344
Abstract :
In this paper, time evolutions of threshold voltage (VTH) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the VTH distribution under bias temperature (BT) stress was observed, whereas average values of VTH monotonically increased. On the other hand, the VTH distribution was remarkably deteriorated after soft breakdown progression of gate oxides.
Keywords :
MOSFET; Weibull distribution; semiconductor device breakdown; thermal stresses; MOSFET performance; Weibull distributions; bias temperature stress; p-MOSFET; process fluctuation; soft breakdown progression; statistical distribution; threshold voltage distribution; time evolutions; ultrathin gate oxides; Dielectric breakdown; Dielectric thin films; Electric breakdown; MOSFET circuits; Niobium compounds; Statistical distributions; Stress; Temperature distribution; Threshold voltage; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
Print_ISBN :
0-7803-8528-4
Type :
conf
DOI :
10.1109/ICICDT.2004.1309978
Filename :
1309978
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3125083
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