• DocumentCode
    3125083
  • Title

    Time evolution of VTH distribution under BT stress in ultra-thin gate oxides

  • Author

    Mitani, Yuichiro ; Satake, Hideki

  • Author_Institution
    Corporate R & D Center, Toshiba Corp., Yokohama, Japan
  • fYear
    2004
  • fDate
    2004
  • Firstpage
    341
  • Lastpage
    344
  • Abstract
    In this paper, time evolutions of threshold voltage (VTH) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the VTH distribution under bias temperature (BT) stress was observed, whereas average values of VTH monotonically increased. On the other hand, the VTH distribution was remarkably deteriorated after soft breakdown progression of gate oxides.
  • Keywords
    MOSFET; Weibull distribution; semiconductor device breakdown; thermal stresses; MOSFET performance; Weibull distributions; bias temperature stress; p-MOSFET; process fluctuation; soft breakdown progression; statistical distribution; threshold voltage distribution; time evolutions; ultrathin gate oxides; Dielectric breakdown; Dielectric thin films; Electric breakdown; MOSFET circuits; Niobium compounds; Statistical distributions; Stress; Temperature distribution; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on
  • Print_ISBN
    0-7803-8528-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2004.1309978
  • Filename
    1309978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3125083