Can TDDB continue to serve as reliability test method for advance gate dielectric?

Author

Cheung, Kin P.

Author_Institution

Electr. & Comput. Eng., Rutgers Univ., NJ, USA

fYear

2004

fDate

2004

Firstpage

345

Lastpage

348

Abstract

Advanced gate dielectrics for MOSFET, be it ultra thin SiO₂ or high-k materials are destined for deep submicron technology that is moving increasingly toward 1 voltage or below operating voltage. In this paper, we show that the well-established method of reliability evaluation and lifetime projection for gate dielectric, namely time dependent dielectric breakdown (TDDB), will no long be a suitable method for reliability evaluation, for gate dielectrics in low voltage operation.

Keywords

MOSFET; integrated circuit reliability; integrated circuit testing; semiconductor device breakdown; semiconductor device reliability; tunnelling; MOSFET; advanced gate dielectric; breakdown model; electron-capture rate constant; irreversible breakdown; lifetime projection; low voltage operation; neutral trap generation; reliability test method; stress voltage; time dependent dielectric breakdown; tunneling current; Breakdown voltage; Conductivity; Dielectric breakdown; Electric breakdown; High K dielectric materials; Integrated circuit reliability; Low voltage; Probability; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on

Print_ISBN

0-7803-8528-4

Type

conf

DOI

10.1109/ICICDT.2004.1309979

Filename

1309979