• DocumentCode
    312513
  • Title

    GaAs MESFET high frequency current-mode filters

  • Author

    Takai, N. ; Fujii, Nobuo

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
  • Volume
    1
  • fYear
    1997
  • fDate
    9-12 Jun 1997
  • Firstpage
    301
  • Abstract
    GaAs MESFET is expected to be applied for high frequency analog integrated circuits. However, as n-channel FET is only now practically in use, the development of GaAs MESFET analog integrated circuits has been left behind. In this paper, novel low power GaAs MESFET current-mode lossy and lossless integrators using common-gate structure are proposed. The proposed circuits are very simple. A bandpass filter is composed as an application example. HSPICE simulation results show good performances
  • Keywords
    III-V semiconductors; MESFET integrated circuits; SPICE; active filters; band-pass filters; circuit analysis computing; gallium arsenide; integrated circuit design; integrating circuits; GaAs; HSPICE simulation results; MESFET; analog integrated circuits; bandpass filter; common-gate structure; current-mode lossy integrators; high frequency current-mode filters; lossless integrators; Band pass filters; Circuit simulation; FETs; Frequency; Gallium arsenide; Impedance; MESFET circuits; Power supplies; Transfer functions; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
  • Print_ISBN
    0-7803-3583-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.1997.608714
  • Filename
    608714