MMIC active filter with tuned transversal element

Author

Tam, Kam ; Vitor, Pedro ; Martins, R.P.

Author_Institution

Fac. of Sci. & Technol., Macau Univ., Macau

Volume

1

fYear

1997

fDate

9-12 Jun 1997

Firstpage

305

Abstract

A novel GaAs MMIC active filter structure based on the lumped and transversal technique is proposed for operation in the X-band. This new structure includes a tuned amplifier in order to improve the band edge rejection. A design example of a bandpass filter centered @ 7.5 GHz with 2 dB passband ripple and 30 dB rejection @1 GHz apart from passband edges is presented in terms of computer simulated results and layout. The simulated results demonstrate its superior performance when compared with the traditional lumped and transversal technique

Keywords

III-V semiconductors; MMIC; active filters; band-pass filters; circuit analysis computing; circuit tuning; digital simulation; gallium arsenide; lumped parameter networks; 7.5 GHz; GaAs; MMIC active filter; X-band; band edge rejection; bandpass filter; computer simulated results; lumped technique; tuned amplifier; tuned transversal element; Active filters; Band pass filters; Computational modeling; Computer simulation; Gallium arsenide; Low pass filters; MMICs; Microwave filters; Passband; Transversal filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on

Print_ISBN

0-7803-3583-X

Type

conf

DOI

10.1109/ISCAS.1997.608716

Filename

608716