A novel capacitive RF MEMS switch design for low voltage applications

This paper presents a novel capacitive radio frequency Microelectromechanical systems switch on quartz substrate having stiff ribs around the membrane. Due to the need of high voltage for electrostatic actuation; buckling effect in switch membrane and stiction problem become the primary concern with RF MEMS switches and can be reduced with this proposed design approach due to the stiffness of ribs around the membrane. Lower mass of the beam and reduction in squeeze film damping is achieved due to the slots and holes in membrane that further aid in attaining high switching speeds. Two actuation electrodes are provided to increase the actuation area thus helps n achieving lower actuation voltages. This proposed switch is optimized to operate in k-band that results in high isolation of -41 dB and low insertion loss of -0.034 dB at 21 GHz with need of low actuation voltage of 9.7 V for operation of the switch.