Noise and frequency analyses of a miniaturized 3-DOF accelerometer utilizing silicon nanowire piezoresistors

This paper presents the characterization of nanowire p-type Si piezoresistor, as well as the design of an ultra small 3-degree of freedom (3-DOF) accelerometer utilizing the nanowire Si piezoresistor. The investigation of silicon nanowire piezoresistor showed the longitudinal piezoresistance coefficient π_l[011] of the Si nanowire piezoresistor increased up to 60% with a decrease in the cross sectional area, while transverse piezoresistance coefficient π_t[011] decreased with an increase in the aspect ratio of the cross section. The sensitivity, noise, and frequency performance of the ultra small accelerometer using the silicon nanowires are carefully analyzed.