Title :
GaSb QW-based `buffer-free´ vertical LED monolithically embedded within a GaAs cavity using interfacial misfit arrays
Author :
Huffaker, D.L. ; Mehta, M. ; Balakrishnan, G. ; Huang, S. ; Khoshakhlagh, A. ; Patel, P. ; Kutty, M.N. ; Dawson, L.R.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
Abstract :
We demonstrate a monolithic, hybrid GaSb/GaAs diode emitting at 1.6 ¿m. The LED is comprised of a GaSb active region embedded within GaAs/AlGaAs DBRs using two interfacial misfit arrays. Growth, fabrication and characterization is discussed.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; gallium compounds; integrated optics; laser cavity resonators; light emitting diodes; optical fabrication; optical materials; semiconductor growth; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; 1.6 micron; DBR; GaAs; GaAs cavity; GaAs-AlGaAs; GaAs-based vertical cavity surface emitting laser; GaSb QW; GaSb active region; GaSb-GaAs; LED characterization; LED fabrication; LED growth; VCSEL; buffer-free vertical LED; interfacial misfit arrays; Capacitive sensors; Distributed Bragg reflectors; Electrons; Etching; Fabrication; Gallium arsenide; Gold; Light emitting diodes; Thermal conductivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278951
