Title :
GaAsSbN/GaAsSb/InP type-II Quantum Wells for Mid-IR Emission
Author :
Huang, J.Y.T. ; Xu, D. ; Park, J.H. ; Mawst, L.J. ; Kuech, T.F. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
Incorporation of nitrogen into GaAsSb/InP quantum wells leads to bandgap narrowing and allows for GaAsSbN/GaAsSb/InP type-II "W" QW structures with potential of achieving emission in the 2-3 mum wavelength region
Keywords :
III-V semiconductors; antimony compounds; gallium arsenide; gallium compounds; indium compounds; optical materials; photoluminescence; quantum well lasers; semiconductor quantum wells; 2 to 3 micron; GaAsSbN-GaAsSb-InP; mid-IR emission spectra; nitrogen incorporation; photoluminescence; type-II quantum wells; Charge carrier processes; Electron emission; Indium gallium arsenide; Indium phosphide; Photonic band gap; Quantum cascade lasers; Quantum computing; Quantum well lasers; Temperature; Thermal conductivity;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.278952
