Wideband high power GaN on SiC SPDT switch MMICs

The design and performance of three wideband SPDT switch MMICs utilizing GaN on SiC technology are presented. The circuits are designed to cover frequency ranges of DC-6 GHz, DC-12 GHz and DC-18 GHz with input power handling optimized over the specified bandwidth. Measured in-fixture s-parameter data demonstrates a maximum insertion loss of 0.7 dB, 1.0 dB and 1.5 dB, respectively for the 6 GHz, 12 GHz and 18 GHz designs. Measured continuous wave power data demonstrates typical input RF power handling of 40 W, 15 W and 10 W, respectively for the 6 GHz, 12 GHz and 18 GHz MMICs.