DocumentCode
3126965
Title
Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm
Author
Zilkie, A.J. ; Meier, J. ; Smith, P.W.E. ; Mojahedi, M. ; Aitchison, J.S. ; Poole, P.J. ; Allen, C.Ni. ; Barrios, P. ; Poitras, D. ; Wang, R.H. ; Rotter, T.J. ; Yang, C. ; Stintz, A. ; Malloy, K.J.
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
fYear
2006
fDate
Oct. 29 2006-Nov. 2 2006
Firstpage
276
Lastpage
277
Abstract
We compare experimentally the gain recovery times of quantum dot, quantum dash, and quantum well amplifiers based on InP and operating at 1.55mum. The QD device gives the shortest recovery time of ~15 ps
Keywords
III-V semiconductors; indium compounds; laser beams; semiconductor optical amplifiers; semiconductor quantum dots; semiconductor quantum wells; 1.55 micron; InP; gain recovery; quantum dash amplifier; quantum dot amplifier; quantum well amplifier; semiconductor amplifier; Absorption; Indium phosphide; Molecular beam epitaxial growth; Quantum computing; Quantum dots; Quantum well devices; Semiconductor optical amplifiers; Stationary state; Substrates; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9556-5
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279055
Filename
4054164
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