Title :
Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable
Author :
Fortuna, Seth A. ; Dowdy, Ryan ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
fDate :
May 31 2010-June 4 2010
Abstract :
We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and compatible with existing processing technology and integratable with various devices.
Keywords :
III-V semiconductors; carrier mobility; epitaxial growth; gallium arsenide; nanofabrication; nanowires; semiconductor growth; semiconductor quantum wires; (100) GaAs substrates; (110) GaAs substrates; GaAs; high-mobility semiconductor nanowires; planar semiconductor nanowires; self-aligned semiconductor nanowires; twin-free semiconductor nanowires; Gallium arsenide; III-V semiconductor materials; Inductors; Laboratories; MOCVD; Nanotechnology; Nanowires; Substrates; Surface morphology; Temperature control;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516728
