Title :
Lithography for sub-90nm applications
Author :
Van den Hove, L. ; Goethals, A.M. ; Ronse, K. ; Van Bavel, M. ; Vandenberghe, G.
Author_Institution :
IMEC vzw, Leuven, Belgium
Abstract :
In order to cope with the progressive scaling of CMOS, new lithography techniques are introduced for sub-90nm applications. Among them are the introduction of the 157nm wavelength and extreme ultra-violet lithography (EUVL). However, the delay in availability of these tools requires the extension of 193nm lithography towards future technology nodes. This paper gives an overview of the latest breakthroughs and the remaining challenges to the lithography community.
Keywords :
CMOS integrated circuits; ULSI; ultraviolet lithography; 157 nm; 193 nm; CMOS; ULSI; extreme ultra-violet lithography; scaling; technology nodes; Birefringence; CMOS technology; Contamination; Lenses; Lithography; Optical design; Optical materials; Optical refraction; Optical variables control; Semiconductor device manufacture;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175767
